DHS110N15D TO252 东海MOS

DHS110N15D85A 150V N-channel Enhancement Mode Power MOSFET4 Electrical Characteristics 4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted) Parameter Symbol Rating UnitsDrain-Source Voltage VDSS 150 VGate-Source Voltage VGSS ±20 VDrain Current(continuous) ( 3) ID 85 ADrain Current(continuous)(T=100℃) ( 3) ID 60 ADrain Current(Pulsed) ( 4) IDM 340 ASingle Pulse Avalanche Energy (5) EAS 420 mJAvalanche Current (5) IAS 41 AMaximum Power Dissipation Ta=25℃ PD 1.25 WTc=25℃ PD 120 WOperating Junction Temperature Range TJ -55～150 ℃Storage Temperature Range Tstg -55～150 ℃4.2 Thermal Characteristics Parameter Symbol Rating Unit Thermal Resistance Junction-to-Case RθJC 1.04 ℃/WThermal Resistance Junction-to-Ambient RθJA 100 ℃/W1 Description These N-channel enhancement mode power mosfets. used advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 2 Features ● Low on resistance ● Low gate charge ● High avalanche current ● Fast switching ● Low reverse transfer capacitances ● 100% single pulse avalanche energy test ● 100% ΔVDS test 3 Applications ● Power switching applications ● Motor control and drive ● Battery management ● UPS(Uninterrupible Power Supplies)